Maintaining a Stable Etch Selectivity between Silicon Nitride and Silicon Dioxide in a Hot Phosphoric Acid Bath

Maintaining a Stable Etch Selectivity between Silicon Nitride and Silicon Dioxide in a Hot Phosphoric Acid Bath

Experiments showed that increasing water concentration in the bath results in higher selectivity: more Si3N4 etched and less SiO2 etched. With the installations of a water concentration monitor and a water spiking apparatus, the bath is able to control the water concentration. The partial replacement of the chemical bath after each product lot reduces dissolved silicon concentration. The addition of H2SO4 saves initial conditioning time. With all of the efforts, the bath starts at a high selectivity and maintain this selectivity for an extended bath life.

Advanced Process Control of Chemical Concentration for Solar Cell Manufacturing

Advanced Process Control of Chemical Concentration for Solar Cell Manufacturing

The continuously increasing integration of today’s most advanced solar cells requires increasingly tight process control of the cell fabrication. Although numerous studies have been performed to analyze the mechanisms and kinetics of these processes, little attention, if any, has been given to monitoring and controlling the chemical concentrations in the process baths.