GDE C200 PLASMA ETCH SYSTEM
System Overview
GDE C200 is an ICP etch system for dielectric etch and compound semiconductors, designed with ultra-high density plasma sources for higher etch rates. Configuration options include: single, dual or triple process modules.
GDE C200 Plasma Etch System
Substrate Size:
Applications compounds:
Technology Markets:
100 mm, 150 mm, 200 mm
SiC, SiN, BSG, SiO2, Al2O3, & GaN
Advanced Packaging, Power IC, Optical Communication Devices
Processes
- SiC back hole etch
- SiC terminal etch
- SiC MOSFET trench etch
- Other glass materials etch
- Planar Lightwave Circuit etch
Production Advantages
- Excellent performance in etching GaN, SiC, SiN, SiO2, Al2O3 and other materials
- Wide process window—easy to integrate with related processes
- Chamber design optimizes maintainability & uptime
- High conductance pumping system
- Excellent particle control