System Overview
GDE C200 is an ICP etch system for dielectric etch and compound semiconductors, designed with ultra-high density plasma sources for higher etch rates. Configuration options include: single, dual or triple process modules.

 GDE C200 Plasma Etch System

GDE C200 Plasma Etch System

Substrate Size:
Applications compounds:
Technology Markets:

100 mm, 150 mm, 200 mm
SiC, SiN, BSG, SiO2, Al2O3, & GaN
Advanced Packaging, Power IC, Optical Communication Devices

  • SiC back hole etch
  • SiC terminal etch
  • SiC MOSFET trench etch
  • Other glass materials etch
  • Planar Lightwave Circuit etch
Production Advantages
  • Excellent performance in etching GaN, SiC, SiN, SiO2, Al2O3 and other materials
  • Wide process window—easy to integrate with related processes
  • Chamber design optimizes maintainability & uptime
  • High conductance pumping system
  • Excellent particle control