Advanced Chemical Concentration Control for Fabrication of Devices Using SiC

Advanced Chemical Concentration Control for Fabrication of Devices Using SiC

In conventional MEMS fabrication, relatively inert compounds such as Si3N4 are used as an etch stop or mask for creating patterns on wafers. However, materials such as this require insight as to their etch selectivity corresponding to that of the substrate material and are not suitable for high temperature devices.